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经过近20年的发展,非晶半导体的研究——特别是氢化非晶硅(α-Si:H)——已成为当前凝聚态物理和固态电子学中最活跃的领域之一.这类新型的电子材料之所以能引起人们的极大兴趣和高度重视,是因为这类材料具有广阔的应用前景,而它的性质却还未得到理论上的解释;薄膜制备技术还需进一步改进、完善,器件的重要用途尚在研究与探索之中.当今大家所熟悉的晶体管、集成电路以及由其作为有源元件制备的收音机、电视机、计算机等都是以晶态半导硅(C-Si)和砷化镓(C-GaAs)等材料制成.然而非晶态半导体硅(α-Si:H)薄膜由于其优良的光电导特性和直接光能隙结构,以及可实现大面积淀积
After nearly 20 years of development, amorphous semiconductor research - especially hydrogenated amorphous silicon (α-Si: H) - has become one of the most active areas in condensed matter physics and solid state electronics. The reason why electronic materials can arouse great interest and attention because of their broad application prospects, but its nature has not yet been a theoretical explanation; film preparation technology needs to be further improved, perfect, The important use of the device is still under research and exploration.Nowadays, transistors, integrated circuits and radio, television, computer and the like which are well-known to all of them are all made of crystalline semiconducting silicon (C-Si) And gallium arsenide (C-GaAs), etc. However, amorphous silicon (α-Si: H) thin films have been widely used in many fields due to their excellent photoconductivity and direct photo-energy gap structure,