四.半导体界面 (1).四器体式配位的半导体表面结构——由低能电子衍射技术所得——(533面～539面) 本文是一篇对已掌握了表面原子几何形态知识的(?)论性文章,具体地说。也就是对四面体式配位的单质半导体以及对双组元(Ⅲ-Ⅴ和Ⅱ—Ⅵ)化合物半导体认识的评论性文章,它是根据弹性低能电子衍射几何图形和强度分析,与单体[运动学的)与/或多体散射(动力学的)模型精析,对比所得评论的 4. Semiconductor Interfaces (1). Four-body Coordinated Semiconductor Surface Structure - by Low-Energy Electron Diffraction - (533 ~ 539 Surface) This article is a master of the surface geometry of the atomic geometry (? ) Arguments, specifically. That is, a tetrahedrally-coordinated single-element semiconductor and a commentary on the recognition of biphasic (III-V and II-VI) compound semiconductors based on elastic low-energy electron diffraction geometry and intensity analysis, Learn) and / or Multibody Scattering (Kinetic) Model Analysis, comparing the resulting commentary