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当有电流由射级向集极流动时,面结合型晶体管的工作特性可用基区电荷加以描述,从而可引出一组新的参数——时间常数来描述晶体管的特性;这些时间常数通常用每微安多少微微库仑的单位来表示。本文首先分析了晶体管的大信号运用性能,并提出了作用和饱和两个区域的等效线路。这种分析方法也可加以推广,用于解释晶体管小信号导纳参数。本文概述了时常数和其它重要参数的测量方法。
When current flows from the emitter to the collector, the operating characteristics of the junction transistor can be described by the base charge, which leads to a new set of parameters called time constants describing the characteristics of the transistor. These time constants are usually expressed in terms of Microampere slightly less coulomb units to indicate. In this paper, the large signal performance of the transistor is analyzed first, and the equivalent circuit of the two regions of action and saturation is proposed. This method of analysis can also be generalized to explain transistor small-signal admittance parameters. This article outlines methods for measuring time constants and other important parameters.