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报道了在V型槽图形衬底上利用分子束外延技术外延生长的GaAs/AlGaAs量子线.外延截面在扫描电子显微镜下可以看到在V型槽底部形成了弯月型量子线结构,量子线尺寸约为底边60nm高14nm的近三角形.低温87K下光致发光谱测试在793.7和799.5nm处出现峰值,验证了量子线的存在.理论近似计算结果显示,相比等宽度量子阱有8meV的蓝移正是由于横向量子限制引起的.
The GaAs / AlGaAs quantum wires epitaxially grown by molecular beam epitaxy on a V-shaped grooved substrate have been reported. The cross-section of the epitaxial cross-section shows a crescent-shaped quantum wire structure at the bottom of the V- The size of the near triangle was 60nm at the bottom and 14nm at the bottom.The photoluminescence spectra at 87K at low temperature showed peaks at 793.7 and 799.5nm and verified the existence of quantum wires.The theoretical calculation shows that compared with the equivalent width of 8meV The blue shift is due to lateral quantum restrictions.