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研究了移动加热器法生长CdMnTe晶体的生长界面。采用传统摇摆炉和垂直Bridgman炉合成多晶原料,并比较了不同多晶原料对移动加热器法生长界面的影响。结果显示,采用垂直Bridgman法合成多晶生长的CdMnTe晶体(CMT2)相对于传统摇摆炉合成多晶生长的晶体(CMT1),其生长界面较为光滑且凹面曲率更低。分析了生长界面对CdMnTe晶体的Mn成分和Te夹杂相分布的影响。CMT2晶体Mn的径向成分分凝和Te夹杂相密度及尺寸均小于CMT1晶体。总之,垂直Bridgman法合成多晶原料能明显改善生长界面的形态,有利于降低移动加热器法生长Cd Mn Te晶体的Te夹杂相和Mn的成分分凝,提高晶体的质量。
The growth interface of CdMnTe grown by the mobile heater method was studied. Polycrystalline materials were synthesized by a traditional rocking furnace and a vertical Bridgman furnace. The effects of different polycrystalline materials on the growth interface of mobile heater were compared. The results show that the growth of polycrystalline CdMnTe crystal (CMT2) by vertical Bridgman method is more smooth and the concave curvature is lower than the conventional crystal growth of polycrystalline growth crystal (CMT1). The influence of growth interface on the distribution of Mn and Te inclusions in CdMnTe crystal was analyzed. The radial component fractionation and the Te inclusion phase density and size of Mn in CMT2 crystal are smaller than that of CMT1 crystal. In short, the vertical Bridgman synthesis of polycrystalline raw materials can significantly improve the morphology of the growth interface is conducive to reducing the mobile heater growth of Cd Mn Te crystal growth of Te inclusions and Mn component segregation, improve the quality of the crystal.