Electron energy relaxation timeτis one of the key physical parameters for electronic materials.In this study,we develop a new technique to measureτin a semico
Heavily Mn-doped SiGe thin films were grown by radio frequency magnetron sputtering and then treated by postgrowth thermal annealing.Structural characterization
The terahertz(THz)resonance,chirality,and polarization conversion properties of a double-layer chiral metasurface have been experimentally investigated by THz t
We report experimental investigation of the resistivity and Nernst effect in two-dimensional(2D)NbSe2 crystals.A strongly enhanced Nernst effect,100 times large