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使用U-4100紫外可见光光度计和QM40稳态/瞬态荧光光谱仪分别对不同V/Ⅲ比分子束外延(MBE)制备的GaN纳米柱阵列进行了测试,分析了V/Ⅲ比对GaN纳米柱表面形貌及发光特性的影响。反射光谱、透射光谱和室温稳态光致发光光谱结果表明:MBE制备的GaN纳米柱阵列其V/Ⅲ比直接影响纳米柱的带边发光、黄带发光、蓝带发光和光吸收等光学特性。当波长为480 nm蓝光段时,纳米柱有最强的反射能力。纳米柱V/Ⅲ比为6∶1时反射率峰值最大,约为55%,且峰值随V/Ⅲ比的变化交替变化。纳米柱V/Ⅲ比为8∶1时透射率最大。纳米柱V/Ⅲ比为10∶1时黄带发光几乎消失,且365 nm附近的带边发光和440 nm附近的蓝带发光增强。拟合结果中370 nm为主要的带边发光峰。
The GaN nanocolumn arrays prepared by different V / Ⅲ ratio molecular beam epitaxy (MBE) were tested by U-4100 UV-visible spectrophotometer and QM40 steady-state / transient fluorescence spectrometer, respectively. Surface morphology and luminescence properties. The results of reflection spectra, transmission spectra and steady-state photoluminescence spectra at room temperature show that the V / III ratio of GaN nanorods fabricated by MBE directly affects the optical properties of nanorods such as band edge emission, yellow band emission, blue band emission and optical absorption. When the blue wavelength of 480 nm, the nanopillars have the strongest reflectivity. The maximal reflectivity peak is about 55% when the ratio of V / Ⅲ is 6:1, and the peak changes alternately with the ratio of V / Ⅲ. When the ratio of V / Ⅲ was 8:1, the transmittance was the highest. When the ratio of V / Ⅲ was 10:1, the luminescence of yellow band almost disappeared, and the band edge emission near 365 nm and the blue band near 440 nm were enhanced. The fitting results of 370 nm as the main band edge emission peak.