目前很多无位错硅单晶经过Sirtl腐蚀剂或改良的Sirtl腐蚀剂腐蚀后,在横断面上可看见呈漩涡状分布的浅底蚀坑。所谓硅单晶中微缺陷,目前主要就是指的这种缺陷。在硅器件制备热处理中,这种缺陷上将产生金属微沉淀、绝缘微沉淀及层错,损害硅器件性能。例如,使P-N结反向漏电流增大,产生局部微等离子击穿,使电荷耦合器件的寄存时间缩短,对集成电路影响更大。因此研究这种缺陷的机理,探索消除它们的方法,对于发展硅材料、提高硅器件性能具有重要意 At present, many dislocation-free silicon single crystals are etched by Sirtl etchant or modified Sirtl etchant, and the shallow bottom pits with swirling distribution can be seen in the cross-section. The so-called silicon single crystal micro-defects, at present mainly refers to this defect. In the silicon device preparation heat treatment, such defects will produce metal micro-precipitation, micro-precipitation insulation and layer faults, damage the performance of silicon devices. For example, the P-N junction reverse leakage current increases, resulting in local micro-plasma breakdown, charge-coupled device to shorten the storage time, a greater impact on the integrated circuit. Therefore, to study the mechanism of such defects and to explore ways to eliminate them is of great importance to the development of silicon materials and improvement of the performance of silicon devices