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本文对GaAs金属-半导体场效应晶体管(GaAs MESFET’S)在高速开关及高速数字集成电路方面的应用的可能性进行了论证。栅长为1微米的GaAs MESFET的电流增益带宽乘积f_T等于15千兆赫。在大信号开关测试中,这种器件显示出15微微秒的内部时延。在半绝缘的GaAs衬底上单片集成由MESFET和肖特基二极管组成的简单逻辑电路。无负载时,这种逻辑电路的传播时延为60微微秒,而当其输出是3个逻辑门时,其传播时延则为105微微秒。测得有效带宽约为3千兆赫。
This article demonstrates the possibility of GaAs MESFETs for high speed switching and high speed digital integrated circuits. The GaAs MESFET with a gate length of 1 micron has a current gain bandwidth product f_T equal to 15 gigahertz. In large signal switching tests, this device shows an internal delay of 15 picoseconds. Monolithically integrated on a semi-insulating GaAs substrate consists of a simple logic circuit composed of MESFETs and Schottky diodes. This logic has a propagation delay of 60 picoseconds when no load is applied, and 105 picoseconds when its output is three gates. The measured effective bandwidth is about 3 gigahertz.