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用高频辉光放电产生氧等离子体进行GaAs阳极氧化,直径40mm的晶片上可生长出均匀的无定形氧化膜,击穿电场强度±10~6V·cm~(-1),电阻率 10~(15)Q-cm,折射率1.83-1.85(λ=6328(A|°)). 根据AES-XPS的分析,刚生长的阳极氧化层,沿深度可分为三层,第一是缺砷层,靠近表面,厚度～100(A|°);第二层是中心区,组成几乎不随深度变化,Ga/As原子比1.2—1.6,用XPS发现此层的As为未氧化的砷和As_2O_3的砷,第三层是从氧化物到GaAs的过渡区,氧浓度开始下降,此层富砷,而且存在元素砷.在300℃氮氛下退火一小时,可得到过渡区变薄且组成匀一的层.
High-frequency glow discharge oxygen plasma GaAs anodized, the diameter of 40mm wafer can grow uniform amorphous oxide film, the breakdown electric field strength of ± 10 ~ 6V · cm -1, the resistivity of 10 to 15 ) Q-cm, refractive index of 1.83-1.85 (λ = 6328 (A | °)) .According to the analysis of AES-XPS, just grown anodized layer, along the depth can be divided into three layers, the first is the lack of arsenic layer, Close to the surface, the thickness of ~ 100 (A | °); the second layer is the central region, composition almost no change with depth, Ga / As atomic ratio 1.2-1.6 This layer was found by XPS As non-oxidized arsenic and As_2O_3 arsenic , The third layer is the transition from oxide to GaAs, the oxygen concentration begins to decline, the layer is rich in arsenic, and there is elemental arsenic.After annealed at 300 ℃ for one hour under nitrogen atmosphere, the transition zone becomes thin and uniform in composition Floor.