We report an experimental study on the temperature and number evolution of cold cesium atoms diffusively cooled inside a wall-coated glass cell by measuring the
In this paper,we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors (HBTs) with a CBE layout,where we consider th
A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of reduced surface field (RESURF) lateral power device fabricate