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等离子体深刻蚀技术是MEMS制备的关键,利用该技术进行刻蚀时,会出现lag效应和反常lag效应,严重影响器件的性能。为了消除lag效应,建立刻蚀和钝化模型分析lag的产生,并利用ARDE表征lag。采用“四因子-三水平”的正交实验研究不同工艺参数对lag的影响,得到工艺参数影响lag的优先级:线圈功率和极板功率对lag产生影响最大,与此同时得到一组最优的实验参数。在低线圈功率和低极板功率条件下,研究了改变压强和气体流量对lag的影响,增加压强和气体流量都会减小lag。最终通过优化工艺参数得到了反常lag结构和lag消除的刻蚀结构。
Plasma etching technology is the key to MEMS preparation, the use of this technology for etching, there will be lag effect and abnormal lag effect, seriously affecting the performance of the device. In order to eliminate the lag effect, an etching and passivation model was established to analyze the production of lag and to characterize lag using ARDE. The influence of different process parameters on lag was studied by orthogonal experiment of “four factors - three levels”, and the priority of lag was obtained by the influence of process parameters: the influence of coil power and plate power on lag was the greatest, at the same time, a group Optimal experimental parameters. At low coil power and low plate power, the effect of varying pressure and gas flow on lag was studied, and both increasing pressure and gas flow decreased lag. Finally, the optimized lag structure and lag-eliminated etching structure were obtained by optimizing the process parameters.