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针对源漏诱生应变Ge沟道MOSFET的应用前景,开发了一种基于离子注入与准分子激光退火的GeSn合金生长技术。X射线衍射与透射电镜测试结果表明,采用该技术可得到质量优良的GeSn单晶。材料表面平整,无位错缺陷产生,与快速热退火方式相比,晶体质量有明显提高。Sn注入剂量为8×1015cm-2的样品经退火后,其替位式Sn原子含量为1.7%,可满足应变Ge沟道MOSFET的设计要求。该技术附加工艺少,效率高,在实际生产中具有较大的参考价值。
In view of the application prospect of strained Ge-channel MOSFET with source-drain induced strain, a GeSn alloy growth technology based on ion implantation and excimer laser annealing has been developed. X-ray diffraction and transmission electron microscopy results show that the use of this technology can get good quality GeSn single crystal. Material surface smooth, no dislocation defects, compared with the rapid thermal annealing method, the crystal quality has improved significantly. After the sample with Sn implantation dose of 8 × 10 15 cm -2 was annealed, the substitutional Sn atom content was 1.7%, which can meet the design requirements of strained Ge channel MOSFET. The technology of additional technology, high efficiency, in the actual production has a greater reference value.