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全国化合物半导体发光外延技术学术讨论会于1985年6月30日至7月3日在北京市平谷县召开。此次会议是1983年10月发光理事会黄山会议决定筹备召开的。会议重点讨论可见光发光二极管所需的外延技术和装备问题,是一次专门研究国产化问题的小型会议。 到会代表共35人。会议以论文宣讲和分组专题讨论两种形式进行。9位代表应邀作了各种发光材料的外延技术的国内外评述性报告,11位代表作了研究工作报告。
National compound semiconductor light-emitting epitaxial technology seminar in June 30, 1985 to July 3 in Pinggu County, Beijing. The conference was held in October 1983 when Huangshan Conference of Luminescence Council decided to hold the meeting. The conference focused on the epitaxial technology and equipment required for visible light-emitting diodes and was a small meeting devoted to localization issues. To represent a total of 35 people. The conference was conducted in two forms, preaching the essay and thematic discussion in groups. Nine representatives were invited to make domestic and foreign reviews of various epitaxial technologies for luminescent materials, and 11 representatives made research reports.