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介绍了在相同工艺条件下 ,N沟和 P沟输入两种不同结构 CMOS运算放大器电路的电离辐照响应规律及各子电路对电特性的影响情况 .结果表明 :由辐照感生的氧化物电荷引起的N沟镜像负载的不对称是导致 P沟输入运放电特性衰降的主要机制 ;而由氧化物电荷和界面态引起的 N沟差分对的漏电增大则是造成 N沟输入运放电路性能变差的主要原因
This paper introduces the ionizing radiation response law of two different structure CMOS operational amplifier circuits with N-channel and P-channel input under the same process conditions and the influence of each sub-circuit on the electrical characteristics.The results show that the radiation induced by irradiation of oxide N-channel image load caused by charge asymmetry is the main cause of P-channel input operational op-amp characteristics of the main decay; and N-channel differential charge caused by the oxide charge and interface state of the leakage is caused by the N-channel input op amp The main reason for poor performance of the circuit