论文部分内容阅读
Al N薄膜因其具有优异的物理化学性能而有着广阔的应用前景,采用反应磁控溅射法在低温条件下制备AlN薄膜是近些年科研工作的热点。采用直流磁控溅射法,于室温下通入不同流量的氮气在p型硅(100)和载玻片衬底上沉积了AlN薄膜。利用傅里叶变换红外(FTIR)光谱仪、X射线衍射仪(XRD)、扫描电子显微镜(SEM)和分光光度计等分析薄膜的组分、结构、形貌和光学性能。结果表明随着氮气流量的增加,Al N薄膜质量变好,N2流量为8 cm3/min时制备的AlN薄膜为六方纤锌矿结构,在680 cm~(-1)处具有明显的FTIR吸收峰,进一步说明成功制备了AlN薄膜。在300~900 nm的波长范围内,薄膜透过率最高可达94%;薄膜带隙随着氮气流量的增加而增大,最大带隙约为4.04 eV。
Al N thin films have broad application prospects because of their excellent physical and chemical properties. The preparation of AlN thin films by reactive magnetron sputtering at low temperature is a hot research topic in recent years. The DC magnetron sputtering method was used to deposit AlN thin films on p-type silicon (100) and glass substrate at different flow rates of nitrogen at room temperature. The composition, structure, morphology and optical properties of the films were analyzed by Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM) and spectrophotometer. The results show that with the increase of nitrogen flow rate, the quality of AlN thin films becomes better. The AlN thin films prepared at N2 flow rate of 8 cm3 / min are hexagonal wurtzite structure with obvious FTIR absorption peak at 680 cm ~ (-1) , Further illustrate the successful preparation of AlN film. In the wavelength range of 300 ~ 900 nm, the transmittance of the film can reach as high as 94%. The band gap of the film increases with the increase of the nitrogen flow rate, and the maximum band gap is about 4.04 eV.