前言用 Te 作溶剂制备碲镉汞(以下简称 MCT)品体的方法是一种改进的垂直区熔法。利用这种方法制备 MCT 晶体的晶体生长中包括有:凝固过程和输运过程。凝固过程主要是:作为溶质的 MCT,在一定条件下,从溶液中退溶—成核和长晶;输运过程主要是:作为生长晶体的材料 MCT 多晶锭,在一定条件下脱熔,并作为溶质溶解在溶剂中,以及溶质在溶液中的扩散。该方法与一般从“溶剂法”中进行晶体生长不同之处是:输运过程的存在和凝固过程对输运过程的限制。作为一种改进的区熔法,正是利用了凝固过程对输运过程的限制这一 Preface Te as a solvent with the preparation of HgCdTe (hereinafter referred to as MCT) body method is an improved vertical zone melting method. Crystal growth using this method to prepare MCT crystals includes: solidification and transport processes. Solidification process is mainly: as a solute MCT, under certain conditions, the solution from the solution - nucleation and growth; transport process is mainly: as a growing crystal material MCT polycrystalline ingot, under certain conditions, melting and As a solute dissolved in a solvent, and solute diffusion in solution. The difference between this method and crystal growth generally performed in the “solvent method” is the existence of the transport process and the restriction of the transport process by the solidification process. As an improved zone melting method, it is the use of the solidification process on the transport process of this one