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采用金属有机物化学气相淀积方法在铝酸锂LiAlO2衬底上外延生长m面GaN薄膜.X射线衍射测量的结果表明所得薄膜具有较理想的m面晶体取向,并对其各向异性的应变进行了计算,摇摆曲线的测量发现样品存在明显的面内结构各向异性.采用偏振光致发光研究材料的面内光学各向异性,发现随着偏振角度的改变,发光峰的峰位和强度均有明显变化,并用对称性破缺导致价带子带劈裂的理论对结果进行了解释.
The m-plane GaN films were epitaxially grown on the LiAlO2 substrates by metal-organic chemical vapor deposition.The results of X-ray diffraction showed that the obtained films had an ideal m-plane crystal orientation and the anisotropic strain was The calculated and rocking curves show that the samples have obvious in-plane anisotropy.Using polarized photoluminescence to study the in-plane optical anisotropy of the materials, it is found that with the change of the polarization angle, the peak position and the intensity of the luminescence peak Significant changes have been made and the results have been explained by the theory that symmetry breaks lead to valence band subband splitting.