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利用同步辐射光电子能谱研究了室温下p型InP(100)表面,由于K吸附诱发的催化氮化反应过程。对于N_2/K/InP(100)体系的P2p;In4d芯能级和价带谱的研究表明:碱金属吸附于InP(100)表面可以强烈地影响其在室温下的氮化反应,K的存在极大地提高了N_2在InP(100)表面的粘附系数。由我们的实验结果和碱金属吸附于GaAs(110),InP(110),GaP(110)表面的研究结果可知,碱金属吸附于Ⅲ-V族半导体表面后,可以极大地提高N_2在Ⅲ-V族半导体表面的粘附系数,从而促进Ⅲ-V族半导体的氮化反应。碱金属与Ⅲ-V族半导体衬底之间存在界面反应似乎是催化氮化反应顺利进行的必要条件,这不同于碱金属对元素半导体的催化氮化反应的机制,因此由于界面反应而形成的表面缺陷在Ⅲ-V族半导体催化氮化反应过程中的作用是不可忽视的。在Ⅲ-V族半导体催化氮化反应过程中碱金属与N之间无明显的反应发生。N_2/K/InP(100)体系在催化氮化反应过程中形成了比较复杂的氮化物。碱金属对InP(100)表面的催化氮化要比其对InP(110)表面的催化氮化容易,而且形成的氮化物也比InP(110)要复杂。
Synchrotron radiation photoelectron spectroscopy (XPS) was used to study the catalytic nitridation reaction induced by K adsorption on p-type InP (100) surface at room temperature. Studies on P2p; In4d core energy levels and valence band spectra of N 2 / K / InP (100) system show that the adsorption of alkali metal on InP (100) surface strongly affects its nitridation reaction at room temperature. The existence of K Which greatly improves the N 2 adhesion coefficient on the InP (100) surface. From our experimental results and the results of alkali metal adsorption on GaAs (110), InP (110) and GaP (110) surfaces, it can be seen that the adsorption of alkali metal on the surface of III- V semiconductor surface adhesion coefficient, thereby promoting the group III-V nitride semiconductor reaction. The existence of an interfacial reaction between the alkali metal and the group III-V semiconductor substrate seems to be a necessary condition for the catalytic nitridation reaction to proceed smoothly unlike the catalytic nitridation reaction mechanism of elemental semiconductors with respect to elemental semiconductors and therefore due to the interfacial reaction The role of surface defects in the group III-V semiconductor during the catalytic nitridation reaction can not be ignored. There is no obvious reaction between alkali metal and N during the group III-V semiconductor nitridation reaction. N 2 / K / InP (100) system formed more complicated nitrides during the catalytic nitridation reaction. Alkali metal catalyzes nitriding of the InP (100) surface more easily than its catalytic nitridation of the InP (110) surface, and nitrides formed are also more complex than InP (110).