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随着半导体技术突飞猛进的发展,对于制造半导体器件的重要工艺——光刻工艺的要求也越来越高。这些要求中“关于如何提高接触式光刻机套刻精度问题”已成为当前设计新的接触式光刻机的焦点。本文仅就这个问题谈一些粗浅看法。一、目前光刻机发展概况从目前光刻机发展趋向来看,曝光光波越来越短。因为光刻图形分辨率与所用曝光光波的长度的平方根成正比,所以总的趋向是改变曝光的光源。由于它的改变又引起曝
With the rapid development of semiconductor technology, lithography processes are becoming more and more important for the manufacture of semiconductor devices. These requirements “on how to improve the contact lithography engraving accuracy problem” has become the focus of the current design of new contact lithography. This article only talks about this issue some superficial view. First, the current development overview of lithography From the current development trend of lithography, the exposure light is getting shorter and shorter. Because lithographic pattern resolution is proportional to the square root of the length of the exposure light wave used, the general trend is to change the exposed light source. Due to its change caused by exposure