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ＣＯ／Ｔｉ／Ｓｉ或ＴｉＮ／Ｃｏ／Ｔｉ／Ｓｉ多层薄膜结构通过多步退火技术在Ｓｉ单晶衬底上外延生长ＣｏＳｉ２薄膜，ＡＥＳ、ＲＢＳ测试显示ＣｏＳｉ２薄膜具有良好均匀性和单晶性．这种硅化物新技术已用于ＣＭＯＳ器件工艺．采用等离子体增强化学汽相淀积（ＰＥＣＶＤ）技术淀积氮氧化硅薄膜，并用反应离子刻蚀（ＲＩＥ）技术形成多晶硅栅边墙．固相外延ＣｏＳｉ２薄膜技术和边墙工艺相结合，经过选择腐蚀，可以分别在源漏区和栅区形成单晶ＣｏＳｉ２和多晶ＣｏＳｉ２薄膜，构成新型自对准硅化物（ＳＡＬＩＣＩＤＥ）器件结构．在Ｎ阱ＣＭＯＳ工艺中应用这种新型ＳＡＬＩＣＩＤＥ器件结构。提高了ＭＯＳ晶体管和试验电路的性能．
CoSi2 thin films were epitaxially grown on Si single crystal substrates by a multi-step annealing technique using CO / Ti / Si or TiN / Co / Ti / Si multilayers. AES and RBS measurements showed that CoSi2 thin films have good homogeneity and single crystal. This new silicide technology has been used in CMOS device processes. A silicon oxynitride film is deposited by plasma-enhanced chemical vapor deposition (PECVD) and polysilicon cavern sidewalls are formed by reactive ion etching (RIE). The combination of solid-phase epitaxial CoSi2 thin film technology and sidewall technology can selectively form monocrystalline CoSi2 and polycrystalline CoSi2 thin films in source and drain regions and gate regions, respectively, to form a new SALICIDE device structure. This new SALICIDE device architecture is used in N-well CMOS processes. Improve the performance of MOS transistors and test circuits.