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研究了Ｚｎ~＋离子注入ｐ－ＧａＰ半导体所引起的缺陷。在电流密度为０．０３μＡ／ｃｍ~２下，将注入Ｚｎ~＋离子剂量为１×１０１~（１４）离子／厘米~２的ＧａＰ样品腐蚀出蚀坑后用ＳＥＭ观察，结果表明，在离子注入区域有缺陷形成。
The defects caused by Zn ~ + ion implanted p-GaP semiconductor have been investigated. At a current density of 0.03μA / cm ~ 2, a sample of GaP implanted with Zn ~ + ion dose of 1 × 10 ~ (14) ions / cm ~ 2 was etched out of the etch pits and observed with SEM. Injected area is defective.