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本文提出和研制了一个新型的InGaAsP/InP双极型晶体管.在单片集成电路中它能与1.55μmInGaAsP/InP双异质结激光器共容而组成一个晶体管-激光器器件.该晶体管的主要特点是采用氧化镉(CdO)薄层作为器件发射区,由InP组成收集区而形成NpN双异质结晶体管.测量结果表明晶体管能双向工作,测得的正向共发射极电流增益为40(V_(CE)=5V,Ic=1mA),反向增益为8(V_(CE)=1.5V,Ic=100μA).文中还给出了h_(fe)—I_c特性和晶体管CdO-InGaAsP发射结的伏安特性.
In this paper, a novel InGaAsP / InP bipolar transistor is proposed and developed, which is composed of a transistor-laser device with a 1.55μmInGaAsP / InP double heterostructure laser in a monolithic integrated circuit. The main features of this transistor Using a thin layer of cadmium oxide (CdO) as the emitter region of the device, a collector region of InP was formed to form an NpN double heterostructure transistor. The measurement results show that the transistor can work bidirectionally and the measured positive emitter current gain is 40 V_ (V CE = 1.5V, Ic = 100μA). The h_ (fe) -I_c characteristic and the volt-age of the CdO-InGaAsP emitter junction of the transistor are also given An characteristic.