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利用射频磁控溅射方法,在硅尖上沉积了氮化硼(BN)薄膜.红外光谱分析表明,BN薄膜结构为六角BN(h-BN)相(1 380 cm-1和780 cm-1).在超高真空系统中测量了BN薄膜的场发射特性,与沉积在硅片上的BN薄膜比较,沉积在硅尖上的BN薄膜的场发射特性明显提高.开启电场为8 V/μm,最高发射电流为300μA/cm2.沉积在硅尖上的BN薄膜的场发射FN曲线为两段直线,这可能是由于电子发射源于硅尖的尖部和根部造成的.
Boron nitride (BN) thin films were deposited on silicon tips by RF magnetron sputtering.The results of FTIR analysis showed that the BN films were hexagonal BN (h-BN) phase (1 380 cm-1 and 780 cm-1) The field emission characteristics of the BN thin film were measured in an ultrahigh vacuum system and the field emission characteristics of the BN thin film deposited on the silicon tip were significantly improved compared with the BN thin film deposited on the silicon wafer.The turn-on electric field was 8 V / μm , The maximum emission current is 300μA / cm2.The field emission FN curve of the BN thin film deposited on the silicon tip is a two-stage straight line, probably due to the electron emission originated from the tip and root of the silicon tip.