本文采用射频反应磁控溅射法在玻璃基底上分别以Al2O3和AZO为缓冲层制备ZnO:Al(AZO)薄膜,利用X射线衍射仪(XRD)、扫描电镜(SEM)、紫外-可见分光光度计等方法对薄膜的结构和光电性能进行表征。XRD和SEM的分析结果表明,在Al2O3和AZO缓冲层上生长的AZO薄膜均具有较好的C轴择优取向,薄膜表面光滑平整,薄膜的结晶质量得到改善;透射光谱表明所有样品在可见光范围内的透过率均超过80%;薄膜的导电性能得到提高。 In this paper, ZnO: Al (AZO) thin films were prepared by RF reactive magnetron sputtering on glass substrates with Al2O3 and AZO as buffer layers. The films were characterized by XRD, SEM, UV- Meter and other methods to characterize the structure and photoelectric properties of the film. The results of XRD and SEM show that the AZO thin films grown on the Al2O3 and AZO buffer layers have better C-axis preferred orientation, the film surface is smooth and the crystalline quality of the films is improved. The transmission spectra show that all the samples in the visible range Of the transmittance of more than 80%; the conductivity of the film is improved.