论文部分内容阅读
本文采用升华法沿着垂直于c轴方向的[1 ■00]方向生长6H-SiC单晶。利用光学显微镜对晶体表面及腐蚀后的晶片进行观察,发现沿[1 ■00]方向生长出的单晶与传统方法沿[0001]方向生长单晶有很多的不同之处,多型对于籽晶的继承性非常强,但是在生长过程中多型夹杂不会发生,该方法生长的晶体中没有发现螺位错(微管)缺陷。
In this paper, a 6H-SiC single crystal is grown by the sublimation method in the [1 00] direction perpendicular to the c-axis. The observation of the crystal surface and the etched wafer with an optical microscope revealed that there are many differences between the single crystal grown in the [1 00] direction and the single crystal grown in the [0001] direction by the conventional method, The succession is very strong, but in the growth process of multi-type inclusions do not occur, the method of growing crystals found no screw dislocation (microtubule) defects.