一、引言在半导体器件生产工艺过程中,外延、光刻是两道关键工序,它们对器件的研制起着重要作用。而外延生长层的厚薄、生长层的质量,光刻刻蚀出来的线宽、间隔及几何形状直接影响器件的各个光电参数。因此,需要对它们进行反复测量,为工艺改进提供数据,最终达到设计要求。如今大规模集成电路,低损耗、高效的光电器件,需生长的外延层厚度和光刻刻线的宽度都在微米、亚微米之间,使用常规的 I. INTRODUCTION In the production process of semiconductor devices, epitaxy and lithography are two key processes, and they play an important role in the development of devices. The thickness of the epitaxial growth layer, the quality of the growth layer, the line width, the interval and the geometry etched by the lithography directly affect each photoelectric parameter of the device. Therefore, they need to be measured repeatedly, to provide data for process improvement, and ultimately meet the design requirements. Today, large-scale integrated circuits, low-loss, high-efficiency optoelectronic devices, the thickness of the epitaxial layer to be grown, and the width of the photolithography lines are all in the micrometer and sub-micrometer ranges. Conventional