本文介绍了一种双极互补存贮单元的工作原理、运行情况、图形设计和工艺控制。实验结果表明,采用普通双极工艺的互补存贮器,在集成度、低功耗、高速度等方面显示出它的优良性能。对于一个存贮单元(共岛),采用普通的双极工艺,用10微米的光刻精度,占面积0.019平方毫米,测得的功率延迟乘积为0.5微微焦耳。 This article describes the working principle, operation, graphics design and process control of a bipolar complementary memory cell. Experimental results show that the use of complementary memory common bipolar technology, in terms of integration, low power consumption, high speed and so show its excellent performance. For a memory cell (common island), using a common bipolar process, with a lithographic accuracy of 10 microns and a footprint of 0.019 square mm, the measured power delay product is 0.5 picojoule.