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基于InGaP/GaAs异质结双极晶体管(HBT)工艺设计了一款X波段低相噪单片集成压控振荡器(VCO),该VCO采用Colpitts双推(push-push)电路结构,芯片上集成了负阻振荡电路、分布式谐振器、变容二极管和耦合输出电路。通过优化HBT器件尺寸以降低其引入的1/f噪声,同时设计高Q值分布式谐振电路,从而有效降低了VCO的输出相位噪声。通过采用背靠背变容二极管对来增加VCO输出频率调谐带宽。测试结果表明,所设计芯片在5 V供电时的电流约180 m A,电调电压在1~13 V变化下输出频率覆盖8.8~10 GHz,典型输出功率为10 d Bm,单边带相位噪声为-115 d Bc/Hz@100 k Hz。芯片尺寸为2.5 mm×1.6 mm。
An X-band, low-noise monolithic integrated voltage-controlled oscillator (VCO) is designed based on the InGaP / GaAs heterojunction bipolar transistor (HBT) process. The VCO uses a Colpitts push- Integrated negative resistance oscillation circuit, distributed resonator, varactor and coupling output circuit. By optimizing the HBT device size to reduce its introduction of 1 / f noise, while designing a high-Q distributed resonant circuit, which effectively reduces the VCO output phase noise. VCO output frequency tuning bandwidth is increased by using back-to-back varactor pairs. The test results show that the designed chip has a current of 180 m A at 5 V and an output voltage of 8.8-10 GHz at a voltage of 1 V to 13 V with a typical output power of 10 d Bm. Single-sideband phase noise Is -115 d Bc / Hz @ 100 k Hz. The chip size is 2.5 mm × 1.6 mm.