提出了一个机械化学抛光中晶圆材料非均匀性的有限元模型.通过分析压力、摩擦力、抛光垫和承载膜的可压缩性对晶圆的应力分布的影响,研究了抛光过程中晶圆厚度的不均匀性.结果证明非均匀剪应力是晶圆厚度变化的一个主要原因这个模型也建立了声发射信号的变化和晶圆厚度不均匀性的关系.通过对晶圆材料切削率的声发射信号监测,证明了实验结果和模型预测值的一致性. A finite element model of wafer material heterogeneity in mechanical chemical polishing is proposed.Through analyzing the influence of pressure, friction force, compressibility of polishing pad and carrier film on the stress distribution of wafer, Thickness nonuniformity.The results show that non-uniform shear stress is one of the main reasons for wafer thickness variation.The model also establishes the relationship between the change of acoustic emission signal and the wafer thickness nonuniformity.Through the analysis of the cutting rate of the wafer material Transmit signal monitoring proves the consistency between experimental results and model predictions.