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玻璃通孔(TGV)技术被认为是下一代三维集成的关键技术,该技术的核心为深孔形成工艺。感应耦合等离子体(ICP)刻蚀技术是半导体领域中深孔形成的重要手段之一。本文通过正交实验设计方法,研究ICP石英玻璃刻蚀工艺中工作压强、C4F8流量、Ar流量三个工艺参数对深孔刻蚀的影响,探索提高刻蚀速率的优化组合。实验结果表明,C4F8流量对玻璃刻蚀速率有显著影响,并且随着C4F8/Ar流量比减小,侧壁角度垂直性越好。实验为TGV技术开发和应用提供了实验依据。
Glass through-hole (TGV) technology is considered as the key technology for next-generation 3D integration. The core of this technology is deep-hole forming process. Inductively coupled plasma (ICP) etching technology is one of the important means of forming deep holes in the semiconductor field. In this paper, the influence of working parameters of ICP quartz glass etching process, such as working pressure, C4F8 flow rate and Ar flow rate, on the etching of deep hole was studied through orthogonal experimental design method, and the optimized combination of improving etch rate was explored. The experimental results show that the flow rate of C4F8 has a significant effect on the etching rate of the glass, and as the flow rate of C4F8 / Ar decreases, the angle perpendicularity of the sidewall is better. The experiment provides experimental basis for the development and application of TGV technology.