论文部分内容阅读
利用射频磁控溅射法室温下在Si(100)衬底上制备了N掺杂的TiO2薄膜,并且采用X射线衍射(XRD)、X射线光电子能谱(XPS)和透射光谱对薄膜进行了表征。XRD结果表明在纯Ar和N2(33.3%)/Ar气氛下制备的TiO2-xNx薄膜均为单一的金红石相,薄膜结晶性良好,呈高度(211)择优取向,而在N2(50.0%)/Ar下制备的薄膜结晶性明显变差;对于N掺杂的TiO2薄膜,XPS表明部分N原子进入TiO2晶格,并且以N-Ti-O、N-O键以及间隙式N原子形式存在;透射光谱表明掺N后的TiO2薄膜吸收边发生了红移。
N - doped TiO2 thin films were prepared on Si (100) substrates by RF magnetron sputtering at room temperature. The films were characterized by X - ray diffraction (XRD) and X - ray photoelectron spectroscopy Characterization. The results of XRD show that TiO2-xNx thin films prepared under pure Ar and N2 (33.3%) / Ar atmosphere are single rutile phases with good crystallinity and high (211) For N-doped TiO2 thin films, XPS indicates that some N atoms enter into the lattice of TiO2 and exist in the form of N-Ti-O, NO bonds and interstitial N atoms. The transmission spectra show that Nano-doped TiO2 film after absorbing the red shift occurred.