论文部分内容阅读
采用磁控溅射法在PLZST陶瓷衬底上制备了不同厚度的LSMO薄膜,并对其微结构、磁性能及电输运特性进行了研究。结果表明,LSMO薄膜具有单一钙钛矿结构,晶粒均匀,表面平整,其中20 nm厚LSMO薄膜粗糙度仅为2.93 nm。在10~300 K温度范围内,LSMO薄膜均具有大的磁电阻效应,20 nm厚的LSMO薄膜磁电阻温度稳定性优异。随着薄膜厚度的增加,薄膜的居里温度、金属绝缘体转变温度、磁化强度和导电性能降低。这可能是由于Pb、Sn、Zr等离子扩散进入LSMO薄膜中,导致MnO 6八面体畸变造成的。
The LSMO thin films with different thicknesses were prepared by magnetron sputtering on the PLZST ceramic substrate. The microstructure, magnetic properties and electrical transport properties of the films were studied. The results show that the LSMO thin film has a single perovskite structure with uniform grains and smooth surface. The roughness of the 20 nm LSMO thin film is only 2.93 nm. The LSMO film has a large magnetoresistance effect in the temperature range of 10 to 300 K, and the LSMO thin film 20 nm in thickness has excellent temperature stability. As the film thickness increases, the Curie temperature, the metal insulator transition temperature, the magnetization and the conductivity of the film decrease. This may be due to the diffusion of Pb, Sn, Zr ions into the LSMO film, resulting in the octahedral distortion of MnO 6.