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最近，选用Ｎ 型体材料碲镉汞（Ｈｇ１－ ｘＣｄｘＴｅ） 作衬底，成功制备了平面ＰｏｎＮ 结构的光电二极管。文中报道了制备各个波段ＰｏｎＮ 结的一些进展。碲镉汞平面ＰｏｎＮ 结采用砷掺杂在Ｎ 型衬底上形成Ｐ区，砷掺杂由砷离子注入加上退火扩散形成。对ＰｏｎＮ 二极管的电流电压关系温度特性的研究表明：直到１４０Ｋ，长波（λｃ ＝ ９ ．１μｍ）ＰｏｎＮ 结的暗电流以扩散电流为主。制备了从中波到长波各个波段的碲镉汞ＰｏｎＮ 结构红外探测器。目前，对于λｃ ＝ ５ ．２μｍ 的器件，Ｒ０ Ａ 值达到６８Ωｃｍ２ ，黑体探测率Ｄ＊ｂｂ（５００Ｋ） 可达２ ×１０１０ｃｍ Ｈｚ１／２／ Ｗ；对于λｃ ＝ １４ ．５μｍ 的器件，Ｒ０ Ａ 值达到０－２Ωｃｍ２ ，黑体探测率Ｄ＊ｂｂ（５００Ｋ） 可达１ ×１０９ｃｍ Ｈｚ１／２／ Ｗ。
Recently, the use of n-type material mercury cadmium telluride (Hg1-xCdxTe) as the substrate, the successful preparation of a planar P-on N structure of the photodiode. The paper reports some progress in the preparation of various bands of PonN junction. HgCdTe planar P on N junction using arsenic doping in the N-type substrate to form P region, arsenic doping by arsenic ion implantation plus annealing diffusion formed. The study on the temperature dependence of P-on-N diode current-voltage shows that until 140K, the dark current of long-wave (λc = 9 .1μm) PonN junction is dominated by the diffusion current. Prepared from the wave to the long wave of the various bands of HgCdTe PnON structure infrared detector. Currently, for λc = 5. 2μm device, R0A value reached 68Ωcm2, blackbody detection rate D * bb (500K) up to 2 × 1010cm Hz1 / 2 / W; for λc = 14. 5μm devices, R0A value reaches 0-2Ωcm2, blackbody detection rate D * bb (500K) up to 1 × 109cm Hz1 / 2 / W.