论文部分内容阅读
面向无源超高频射频识别标签芯片设计了一种低成本的非易失存储器(NVM)。采用PMOS晶体管实现存储单元,制造工艺与标准CMOS工艺兼容,可以降低制造成本。提出了一种新型的操作模式,可减轻写操作对栅氧的破坏。存储器中的所有存储单元共享一个灵敏放大器,数据通过共享的灵敏放大器依次串行读出,这样既节省了面积,又降低了读操作的功耗。基于0.18μm标准CMOS工艺设计实现了存储容量为1 kbit的存储器芯片,该存储器的核心面积为0.095 mm2,并完成了实测。实测结果表明,电源电压为1.2 V,读速率为1 Mb/s时,功耗为1.08μW;写速率为3.2 kb/s时,功耗为44μW。
A passive low-cost non-volatile memory (NVM) is designed for passive UHF RFID chips. The use of PMOS transistors to achieve memory cells, manufacturing processes compatible with standard CMOS process, can reduce manufacturing costs. A new mode of operation was proposed to reduce the damage of gate oxide to write operation. All memory cells in the memory share a sense amplifier, the data through a shared sense amplifier serial read in order to save area and reduce the power consumption of the read operation. Based on a 0.18μm standard CMOS process design, a memory chip with a storage capacity of 1 kbit has been designed. The core area of the memory is 0.095 mm2, and the measurement is completed. The measured results show that the power consumption is 1.08μW when the power supply voltage is 1.2V and the read rate is 1Mb / s, while the power dissipation is 44μW when the write rate is 3.2kb / s.