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本文基于量子机制建立了单轴应变硅nMOSFET栅隧穿电流模型,分析了隧穿电流与器件结构参数、偏置电压及应力的关系.仿真分析结果与单轴应变硅nMOSFET的实验结果符合较好,表明该模型可行.同时与具有相同条件的双轴应变硅nMOSFET的实验结果相比,隧穿电流更小,从而表明单轴应变硅器件更具有优势.该模型物理机理明确,不仅适用于单轴应变硅nMOSFET,只要将相关的参数置换,该模型也同样适用于单轴应变硅pMOSFETs.
In this paper, we establish a single-axis strained silicon nMOSFET gate tunneling current model based on quantum mechanism and analyze the relationship between tunneling current and device structure parameters, bias voltage and stress. The simulation results agree well with the experimental results of uniaxial strained silicon nMOSFET , Which indicates that the model is feasible.At the same time, the tunneling current is smaller than the experimental results of biaxial strained silicon nMOSFETs with the same conditions, which indicates that the uniaxial strained silicon device has more advantages.The physical mechanism of the model is clear and not only applicable to single Axis strained Si nMOSFETs, the model is also applicable to uniaxial strained Si pMOSFETs as long as the relevant parameters are replaced.