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设计了一种新结构InP/InGaAs/InP双异质结双极晶体管(DHBT),在集电区与基区之间插入n+-InP层,以降低集电结的导带势垒尖峰,克服电流阻挡效应.采用基于热场发射和连续性方程的发射透射模型,计算了n+-InP插入层掺杂浓度和厚度对InP/InGaAs/InPDHBT集电结导带有效势垒高度和I-V特性的影响.结果表明,当n+-InP插入层掺杂浓度为3×1019cm-3、厚度为3nm时,可以获得较好的器件特性.采用气态源分子束外延(GSMBE)技术成功地生长出InP/InGaAs/InPDHBT结构材料.器件研制结果表明,所设计的DHBT材料结构能有效降低集电结的导带势垒尖峰,显著改善器件的输出特性.
A new structure InP / InGaAs / InP double heterojunction bipolar transistor (DHBT) is designed. The n + -InP layer is inserted between the collector region and the base region to reduce the conduction band barrier peak of the collector junction. Current Blocking Effect. The effects of the doping concentration and thickness of n + -InP insertion layer on the effective barrier height and IV characteristics of the conduction band of InP / InGaAs / InPDHBT were calculated using the emission transmission model based on the thermal field emission and the continuity equation The results show that better device characteristics can be obtained when the doping concentration of n + -InP insertion layer is 3 × 10 19 cm -3 and the thickness is 3 nm.The InP / InGaAs films have been successfully grown by gas source molecular beam epitaxy (GSMBE) / InPDHBT structure material.The results of device development show that the structure of DHBT material designed can effectively reduce the conduction band barrier peak of collector junction and significantly improve the output characteristics of the device.