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介绍了厚度为300-800μm,有效面积为50-113mm2的高阻GaAs单晶材料制备的核辐射GaAs探测器的研制工艺,测试结果。
The development technology and test results of nuclear radiation GaAs detector fabricated by high resistance GaAs single crystal material with thickness of 300-800μm and effective area of 50-113mm2 are introduced.