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在室温环境下采用射频磁控溅射方法制备了氧化铝(A_l2O_3)薄膜,通过调节溅射气压实现了对薄膜特性的优化控制。当溅射功率为120 W、Ar气压强为0.13Pa时,制备的A_l2O_3薄膜具有最好的厚度均匀性,薄膜中Al和O的原子比为1∶1.67,密度为3.21g/cm~3,粗糙度为0.62nm。这种平滑、致密的薄膜结构能够有效地减少缺陷的形成,获得高击穿电压、高相对介电常数和低漏电等性能。利用优化后的A_l2O_3薄膜作为栅极绝缘层,在聚酰亚胺树脂(PI)基板上室温制备了柔性非晶态铟镓锌氧化物-薄膜晶体管(α-IGZO-TFT),其迁移率为2.19cm2/(V·s),开关比达到105,亚阈值摆幅为0.366V/decade,阈值电压为3.01V。
The film of aluminum oxide (A_l2O_3) was prepared by RF magnetron sputtering at room temperature. The optimal control of the film properties was achieved by adjusting the sputtering pressure. When the sputtering power is 120 W and Ar gas pressure is 0.13 Pa, the prepared A_2O_3 film has the best thickness uniformity. The atomic ratio of Al to O in the film is 1: 1.67, the density is 3.21 g / cm ~ 3, Roughness is 0.62nm. This smooth, dense thin film structure can effectively reduce the formation of defects, access to high breakdown voltage, high relative permittivity and low leakage and other properties. A flexible amorphous indium gallium zinc oxide thin film transistor (α-IGZO-TFT) was prepared on a polyimide resin (PI) substrate by using the optimized A_2O_3 thin film as a gate insulating layer. The mobility was 2.19cm2 / (V · s). The switching ratio reaches 105, the subthreshold swing is 0.366V / decade and the threshold voltage is 3.01V.