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提出了一种ＧａＡｓ 双栅ＭＥＳＦＥＴ的ＰＳＰＩＣＥ直流模型．分析了ＧａＡｓ 双栅ＭＥＳＦＥＴ漏极电流与两个控制栅偏置电压之间的关系，给出了漏极电流表达式．通过提取适当的模型参数，其直流输出特性的模拟曲线与实测曲线基本吻合，说明文中提出的ＧａＡｓ 双栅ＭＥＳＦＥＴ 的ＰＳＰＩＣＥ直流模型是有效的．
A PSPICE DC model of GaAs dual-gate MESFET is proposed. The relationship between the drain current of GaAs dual-gate MESFET and the bias voltages of two control gates is analyzed, and the expression of drain current is given. By extracting the appropriate model parameters, the simulation curve of the DC output characteristics is basically consistent with the measured curve, indicating that the PSPICE DC model of the GaAs dual-gate MESFET proposed in this paper is effective.