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X 射线光刻(XRL)采用约 1nm 波长的 X 射线，是一种接近式光刻。就光刻工艺性能而言，XRL 能同时实现高分辨率、大焦深、大像场等，是其他光刻手段难以比拟的。由于不需要辅助工艺，因而工艺成本很低。掩模制造技术是 XRL 开发中最为困难的部分。本文介绍了适用于 50 nm XRL 的掩模制备的关键技术。
X-ray lithography (XRL) uses X-rays of about 1 nm wavelength and is a proximity lithography. In terms of lithography process performance, XRL can simultaneously achieve high resolution, large depth of focus, large image field, etc., is incomparable with other lithography methods. Due to the absence of ancillary processes, the process costs are low. Mask making technology is the most difficult part of XRL development. This article describes the key techniques for making masks for 50 nm XRL.