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本文报告用相平衡理论计算溶液配比,结合近平衡生长法制备四层结构的GaAlAs双异质结激光器,证明理论计算与实验结果是一致的。通过各种工艺条件的改进,可外延出8×12mm整个片子表面光亮、有源层厚度约02μm连续的、有一定重复性的双异质结激光器外延片。用化学腐蚀光学照相法测得片子的中心约6mm~2是无位错区。用x射线衍射仪测得限制层的Al含量x≈0.36,并由波谱法证明Al含量的均匀性很好,一个片子内各处Al量变化不到±1%。用电子探针测得有源层Al含量y≈0.02,用电子扫描显微照像证明结面是相当平整的。异质结晶格失配a_0△a≈5.75×10~(-4),失配应力δ≈8.23×10~5达因/厘米~2。用这些液相外延片制作质子轰击条型激光器,好的片子面积6×10mm可制出105个室温连续工作的GaAlAs激光器,内量子效率可达72.6%。实验表明:有的激光器室温连温工作可上万小时。
This paper reports the preparation of GaAlAs double heterostructure laser with four-layer structure by the phase equilibrium theory and the near-equilibrium growth method. It is proved that the theoretical calculation and experimental results are consistent. Through the improvement of various process conditions, epitaxial wafers of 8 × 12mm double-heterojunction laser with epitaxial wafers with a bright surface and an active layer thickness of about 02μm can be epitaxy. Using chemical etching photographic method measured the center of the film about 6mm ~ 2 is no dislocation area. The Al content of the limiting layer, x≈0.36, was measured by x-ray diffractometry and the uniformity of Al content was demonstrated by spectroscopy to be as good as less than ± 1% for Al throughout one film. Electron probe measured active layer Al content y ≈ 0.02, with electron scanning micrographs prove that the junction is relatively flat. Heterojunction lattice mismatch a_0 △ a≈5.75 × 10 ~ (-4), mismatch stress δ≈8.23 × 10 ~ 5 dyne / cm ~ 2. Proton bombardment bar-type lasers were fabricated with these liquid-phase epitaxial wafers. A good sheet area of 6 × 10mm produced 105 continuous-time GaAlAs lasers with an internal quantum efficiency of 72.6%. Experiments show that: some of the laser room temperature work even thousands of hours.