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在用提高温度来加速半导体元件的寿命方面,人們的兴趣日益高涨,这說明了对技术的数学基础作出評論的必要性。从四种可靠性概率函数出发,对数正态密度函数的特点表現在如何用累积失效与溫度的关系,通过阿累尼島斯(Arrhenius)綫作图来予測在使用条件下的元件寿命中位数。恒定溫度和增量式地提高的溫度都可以用来取得試驗数据。后者——“級增应力”法——包括一道修正手續。用双极和MOS晶体管的試驗結果說明了上述分析。
The growing interest in accelerating the lifetime of semiconductor components by raising the temperature illustrates the necessity of commenting on the mathematical foundations of technology. Starting from the four reliability probability functions, the lognormal density function is characterized by how the cumulative Arrhenius-temperature relationship is used to determine the component lifetime under service using the Arrhenius plot Digits. Both constant temperature and incrementally increased temperature can be used to obtain the test data. The latter - the “step-by-step stress” method - includes an amendment procedure. The results of the experiments with bipolar and MOS transistors illustrate the above analysis.