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为了得到碳纳米管场发射器件的三极结构,设计了一种新型栅极.在电极的制作过程中使用普通的丝网印刷方法,然后运用化学刻蚀的手段进行双面刻蚀制备出带有小孔阵列的栅极.在栅极制作过程中通过改变酸液刻蚀的时间和浓度,可以腐蚀出不同形状的小孔.运用扫描电镜(SEM)和红外光谱(IR)分析,得到小孔的尺寸、形貌和刻蚀液的成份,然后在三极结构上加电压显示出孔的亮度图像,最后对器件结构进行模拟,算出在电场条件下的电子从阴极拉到阳极基板的轨迹.模拟结果和实验结果一致,从而实现了对场发射三极器件的优化.
In order to obtain the triode structure of the carbon nanotube field emission device, a new type of gate electrode was designed.A common screen printing method was used in the fabrication of the electrode, and then double-sided etching was performed by means of chemical etching A small hole array of the gate in the gate during the production process by changing the acid etching time and concentration can be etched holes of different shapes using scanning electron microscopy (SEM) and infrared spectroscopy (IR) analysis, small Hole size, morphology and composition of the etchant, and then the voltage in the three-pole structure shows the hole brightness image, and finally the device structure simulation to calculate the electric field conditions from the cathode to the anode substrate trajectory The simulation results are consistent with the experimental results, so as to optimize the field emission triode device.