论文部分内容阅读
本文是用深能级瞬态谱(DLTS)研究器件的失效机理.利用DLTS技术,区别是属于表面失效,还是属于体内缺陷引起为失效,并且还研究了深能级杂质对器件电参数的影响.发表于《1986年半导体和集成电路国际会议论文集》,北京
In this paper, we investigate the failure mechanism of devices using deep level transient spectroscopy (DLTS), and whether the difference is due to surface failure or to defects in the body due to DLTS, and the effect of deep level impurities on the electrical parameters of the devices Published in the 1986 Proceedings of the International Conference on Semiconductors and Integrated Circuits, Beijing