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本文记述了用准静态技术C—V曲线测得的离子注入前后的表面态、界面态的测量结果。通过对这些结果进行分析,讨论了离子注入对表面态、界面态的影响。本文还讨论了离子注入对MOS器件阈值电压的影响。
This paper describes the measurement of surface states and interface states before and after ion implantation using a quasi-static C-V curve. By analyzing these results, we discuss the effect of ion implantation on the surface states and interface states. This article also discusses the impact of ion implantation on the threshold voltage of MOS devices.