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采用电沉积硫化亚铁膜之后再硫化的方法制备了FeS_2薄膜材料.即先用含铁和硫元素的水溶液在导电玻璃上电化学沉积FeS薄膜,然后将薄膜在硫气氛中退火制得FeS_2样品.计算了电沉积FeS薄膜的实验参数,研究了硫化过程中温度对FeS_2结构的影响及晶粒的生长动力学过程,计算了晶粒生长的表观活化能、生长速率常数及时间指数,并对样品的电学性能进行了分析.
FeS2 thin films were prepared by electrodeposition of ferrous sulfide films followed by vulcanization.The FeS films were electrochemically deposited on conductive glass with an aqueous solution of iron and sulfur and then annealed in a sulfur atmosphere to produce FeS2 samples The experimental parameters of the electrodeposited FeS thin films were calculated, the effect of temperature on the structure of FeS_2 and the growth kinetics of the grains during the vulcanization process were studied, and the apparent activation energy, growth rate constant and time index of the grain growth were calculated. The electrical properties of the samples were analyzed.