【摘 要】
：
Deep InP gratings are etched by Cl2/CH4/Ar inductively coupled plasma (ICP) at room temperature. A comparison is made between SiNx mask pattes formed by wet and
【机 构】
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Department of Electronic Engineering, Tsinghua University, Beijing 100084
论文部分内容阅读
Deep InP gratings are etched by Cl2/CH4/Ar inductively coupled plasma (ICP) at room temperature. A comparison is made between SiNx mask pattes formed by wet and dry etching. SF6 reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of Cl2/CH4/Ar ICP are optimized for high anisotropy,and a 1.7-μm-deep InP grating with an aspect ratio of 10:1 is demonstrated. The technique is then used for the fabrication of 1.55-μm laterally coupled distributed feedback AlGaInAs-InP laser.
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