用XPS和AES电子能谱的方法对等离子体辅助分子束外延 (MBE)生长的GaN薄膜进行了表面分析和深度剖析 .发现红外分子束外延 (RF MBE)生长的富镓GaN薄膜实际表面存在O和C吸附层 ,C主要为物理吸附 ,而O在GaN表面形成局域化学键产生氧络合物覆盖层 ,并形成一定的深度分布 .杂质O在GaN带隙中导带底形成杂质带同时引入深受主能级 ,使得带隙变窄室温光吸收谱向低能方向移动 ,光致发光谱出现宽带发光峰 .从而影响GaN薄膜的电学和光学性质 The surface analysis and depth analysis of GaN films grown by plasma assisted molecular beam epitaxy (MBE) were carried out by means of XPS and AES electron spectroscopy.It was found that the actual surface of gallium-rich GaN films grown by infrared molecular beam epitaxy (RF MBE) And C adsorbed layer, C is mainly physical adsorption, while O forms local chemical bonds on the GaN surface to produce oxygen-containing coating and form a certain depth distribution.O impurity O is introduced at the bottom of conduction band in GaN band gap Which is deeply affected by the main energy level, which makes the bandgap narrow the room temperature optical absorption spectrum to move toward the low energy direction, and the broad band luminescence peak appears in the photoluminescence spectrum, which affects the electrical and optical properties of the GaN thin film