论文部分内容阅读
为了提高无线通信系统的工作效率,提出了一种基于逆F类结构的新型高效率功率放大器。结合功率晶体管的寄生参数,设计了一种添加了寄生补偿电路的输出端谐波控制网络,对2到5次谐波阻抗进行了处理。针对电路中寄生反馈元件的存在,在输入端对2次和3次谐波阻抗也分别进行了开路和短路处理。该功率放大器选用GaN工艺的HEMT器件作为功率晶体管,当工作在940MHz频率时,经测试所获得的最大漏极效率为87.4%,最大功率附加效率为78.6%,饱和输出功率为39.8dBm。
In order to improve the working efficiency of wireless communication system, a new type of high efficiency power amplifier based on inverse F structure is proposed. Combined with the parasitic parameters of the power transistor, an output harmonic control network with parasitic compensation circuit was designed and the second to fifth harmonic impedance was processed. For the existence of parasitic feedback components in the circuit, the 2nd and 3rd harmonic impedances at the input are also separately open-circuited and short-circuited. The power amplifier uses HEMT GaN devices as the power transistor. When operating at 940MHz, the maximum drain efficiency tested is 87.4%, the maximum power added efficiency is 78.6% and the saturated output power is 39.8dBm.